Current Issue : July-September Volume : 2024 Issue Number : 3 Articles : 6 Articles
Rectenna is the key component in radio-frequency circuits for receiving and converting electromagnetic waves into direct current. However, it is very challenging for the conventional semiconductor diode switches to rectify high-frequency signals for 6G telecommunication (>100 GHz), medical detection (>THz), and rectenna solar cells (optical frequencies). Such a major challenge can be resolved by replacing the conventional semiconductor diodes with tunneling diodes as the rectenna switches. In this work, metal–insulator–metal (MIM) tunneling diodes based on 2D insulating materials were designed, and their performance was evaluated using a comprehensive simulation approach which includes a density-function theory simulation of 2D insulator materials, the modeling of the electrical characteristics of tunneling diodes, and circuit simulation for rectifiers. It is found that novel 2D insulators such as monolayer TiO2 can be obtained by oxidizing sulfur-metal layered materials. The MIM diodes based on such insulators exhibit fast tunneling and excellent current rectifying properties. Such tunneling diodes effectively convert the received high-frequency electromagnetic waves into direct current....
In this study, we propose doping-less feedback field-effect transistors (DLFBFETs). Our DLFBFETs are 5 nm thick intrinsic semiconductor bodies with dual gates. Usually, DLFBFETs are virtually doped through charge plasma phenomena caused by the source, the drain, and the dual-gate electrodes as well as the gate biases. Our DLFBFETs can be fabricated through a simple process of creating contact between a metal and a silicon body without any doping processes. The voltages applied to both gates determine whether the DLFBFETs operate in diode or feedback field-effect transistor (FBFET) modes. In the FBFET mode, our DLFBFETs show good characteristics such as an on/off current ratio of ~104 and steep switching characteristics (~1 mV/decade of current) that result from positive feedback phenomena without dopants....
Flat panel displays are electronic displays that are thin and lightweight, making them ideal for use in a wide range of applications, from televisions and computer monitors to mobile devices and digital signage. The Thin-Film Transistor (TFT) layer is responsible for controlling the amount of light that passes through each pixel and is located behind the liquid crystal layer, enabling precise image control and high-quality display. As one of the important parameters to evaluate the display performance, the faster response time provides more frames in a second, which benefits many highend applications, such as applications for playing games and watching movies. To further improve the response time, the single-pixel charging efficiency is investigated in this paper by optimizing the TFT dimensions in gate driver circuits in active-matrix liquid crystal displays. The accurate circuit simulation model is developed to minimize the signal’s fall time () by optimizing the TFT width-to-length ratio. Our results show that using a driving TFT width of 6790 and a reset TFT width of 640 resulted in a minimum of 2.6572 , corresponding to a maximum pixel charging ratio of 90.61275%. These findings demonstrate the effectiveness of our optimization strategy in enhancing pixel charging efficiency and improving display performance....
Laser pulse amplification by a high-pressure CO2 amplifier in the long-wave infrared (LWIR) spectral range is a feasible technology for strong-field physics research. Crystals such as ZnGeP2 (ZGP) have high nonlinear coefficients and transmittance in the LWIR region, with spectral widths of generated pulses closely matching the gain spectrum of high-pressure CO2 amplifiers. Therefore, ZGP optical parametric oscillation (OPO) may allow higher-efficiency energy extraction in amplifiers, improving the output characteristics of LWIR amplification systems. In this study, the gain measurement of ZGP OPO pulses amplified by a high-pressure CO2 amplifier was carried out for the first time. Single-detector acquisition was utilized to achieve a unified sensor responsivity, and a laser signal-triggered function generator was used to synchronize the seed pulse and amplifier. Six-pass amplification was performed successively, yielding an amplification factor of 4.5 for the peak power and a maximum coefficient of 0.42% cm−1 for the small-signal gain. The gain and loss effect during small-signal amplification were discussed. The potential capability of acquiring ultra-short pulses with ZGP OPO pulses was also explored with the FFT function of MATLAB software....
The photonic crystal surface-emitting laser (PCSEL) has attracted much attention due to the advantages of a small far-field divergence angle and high output power. Here, we report a high-power terahertz (THz) photonic crystal laser with high beam quality through the optimization of the absorption boundary condition and the introduction of the symmetrically distributed electrodes. Single-mode surface emission at 3.4 THz with the maximum peak output power of 50 mW is demonstrated. Meanwhile, a high symmetric far-field pattern with C6 symmetry and a small divergence angle is achieved. In this device, the integration of the stable single-mode operation, high beam quality and high output power is realized, which may have great significance for practical applications....
ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL.We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-tovalley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%....
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